High Temperature Low Leakage Schottky Diode
Power semiconductor devices are frequently limited by high temperature operation due to large current conduction that causes the devices to invariably heat up. In addition, the choice of barrier material also has a strong influence on the maximum operating temperature and minimum power dissipation.
MIMOS is currently developing carbon based material as barrier metal to improve leakage current performance at high temperature, replacing conventional metal such as titanium, nickel and cobalt.
Based on 0.40 µm trench technology, Schottky diode incorporated with carbon based material offers a better leakage current at high temperature. This improved TMBS device offers excellent high temperature stability with wider operating temperature capability.
- Solar Panel Power Converter
- Power Supply
- Electronic systems in automotive
- Battery charger/adapter
- Better than 60V reverse voltage
- Very low leakage (< 5µA @ RT and < 100µA @ 150°C)
- Cheap raw material
- Integration to MOS process